High Deep-Ultraviolet Quantum Efficiency GaN P—I—N Photodetectors with Thin P-GaN Contact Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/1/017302/pdf
Reference16 articles.
1. Short-wavelength solar-blind detectors-status, prospects, and markets
2. AlGaN ultraviolet photoconductors grown on sapphire
3. Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
4. Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate
5. Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors
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