Film Thickness Dependence of Rectifying Properties of La 1.85 Sr 0.15 CuO 4 /Nb-SrTiO 3 Junctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/7/077401/pdf
Reference22 articles.
1. Contact between High-TcSuperconductor and Semiconducting Niobium-Doped SrTiO3
2. Electrical properties of Au/ and YBa2Cu3O7−x/SrTi1−yNbyO3diodes
3. Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions
4. Photogenerated hole carrier injection to YBa2Cu3O7−x in an oxide heterostructure
5. Current–voltage characteristics of a Ag:Y Ba2Cu3O7−δ/Nb-doped SrTiO3bilayer structure
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1. Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode;ACS Applied Materials & Interfaces;2018-03-26
2. Preparation and characterization of La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 superconducting bilayers;Powder Diffraction;2013-09
3. FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES;Modern Physics Letters B;2012-11-26
4. Backward-Like Rectifying Behavior of La1.85Sr0.15CuO4/Nb:SrTiO3 Heterojunctions;Journal of Superconductivity and Novel Magnetism;2012-01-14
5. Heteroepitaxial La2−xSrxNiO4-Nb-Doped SrTiO3Junctions: Synthesis and Rectification Characteristics;Journal of The Electrochemical Society;2011
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