Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N 2 O Doping-Reference-Cited by-同舟云学术

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N 2 O Doping

Published:2008-12 Issue:12 Volume:25 Page:4345-4347
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Jing-Chang Sun,Hong-Wei Liang,Jian-Ze Zhao,Ji-Ming Bian,Qiu-Ju Feng,Jing-Wei Wang,Zi-Wen Zhao,Guo-Tong Du

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/25/12/045/pdf

Reference17 articles.

1. Design, Fabrication and Measurement of Ni/Ti Multilayer Used for Neutron Monochromator

2. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

3. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c -Axis Parallel to the Substrate

4. Blue Light-Emitting Diode Based on ZnO

5. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

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