Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/11/117901/pdf
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3. Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices
4. The Effect of the Oxygen Plasma Treatment for ITO and ZnO Nanorods on the Electroluminescence of ZnO Nanorod/MEH-PPV Heterostructure Devices
5. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
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3. Temperature dependence of the photoluminescence of MnS/ZnS core—shell quantum dots;Chinese Physics B;2014-11-28
4. Electrical properties of electrodeposited zinc selenide (ZnSe) nanowires;Journal of Materials Science: Materials in Electronics;2014-07-14
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