Electrical Properties of La-Doped Al 2 O 3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High-κ gate dielectrics: Current status and materials properties considerations
3. High-resolution depth profiling in ultrathin Al2O3 films on Si
4. Elliptic flux-line-cutting critical-state model
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3. Investigation of structural and electrical properties on substrate material for high frequency metal–oxide–semiconductor (MOS) devices;Materials Research Express;2017-04-21
4. Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon;Semiconductors;2014-04
5. Oxygen vacancy formation and annihilation in lanthanum cerium oxide as a metal reactive oxide on 4H-silicon carbide;Physical Chemistry Chemical Physics;2014
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