Nanocavities: an Effective Gettering Method for Silicon-on-Insulator Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/15/7/017/pdf
Reference15 articles.
1. A comparison of fine-dimension silicon-on-sapphire and bulk-silicon complementary MOS devices and circuits
2. Breakdown in silicon oxides—correlation with Cu precipitates
3. Breakdown in silicon oxides (II)—correlation with Fe precipitates
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1. Ni reactions with surfaces: dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments;Applied Physics A: Materials Science & Processing;2002-05-01
2. The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers;Applied Physics A;2002-01
3. Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers;Applied Physics A Materials Science & Processing;2001-08
4. Gettering of Copper and Nickel in p/p+ Epitaxial Wafers;Journal of The Electrochemical Society;2000
5. Simulation of Nucleation of Anisotropic Si Islands on Reconstructed Si(100)(2×1) Surface;Chinese Physics Letters;1999-09-01
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