Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/8/077/pdf
Reference37 articles.
1. Quantum dots: Paradigm changes in semiconductor physics
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3. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
4. Resonant tunneling in semiconductor double barriers
5. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
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2. The stability of point defects and their effects on the electronic properties of GaAs/AlGaAs superlattice: a first-principles study;Chinese Physics B;2021-07-22
3. Exact ground state solution of shallow hydrogenic impurity states of a spherical parabolic GaAs/InAs quantum dot;Physica Scripta;2019-11-15
4. Optical properties of an exciton trapped by an ionized donor in ellipsoidal quantum dots under electric field and hydrostatic pressure;International Journal of Modern Physics B;2019-05-10
5. Effects of electric field and shape on the ground state energy of an exciton bound to an ionized donor impurity in ellipsoidal quantum dots;Journal of Applied Physics;2013-11-21
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