Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/9/101/pdf
Reference21 articles.
1. Optical evidences of assisted tunneling in a biased double quantum well structure
2. Optical-Phonon Assisted Tunneling in an Asymmetric Double-Quantum-Well Structure
3. Resonant-tunneling transfer times between asymmetric GaAs/Al0.35Ga0.65As double quantum wells
4. Optical phonon‐assisted tunneling in double quantum well structures
5. Density dependence of nonresonant tunneling in asymmetric coupled quantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure;Journal of Physics D: Applied Physics;2018-04-30
2. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure;Applied Physics Express;2015-08-17
3. Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films;Chinese Physics Letters;2010-01
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