Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/34/7/074210/pdf
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhanced Optical Output of Near-Ultraviolet Light-Emitting Diodes by a Monolayer of Nanospheres;Journal of Nanomaterials;2020-04-20
2. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode;Optics Letters;2018-05-31
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