Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Quantum-well intermixing for fabrication of lasers and photonic integrated circuits
2. Quantum well intermixing of In1-xGaxAs/InP and In1-xGaxAs/In1-xGaxAs1-yPymultiple-quantum-well structures by using the impurity-free vacancy diffusion technique
3. A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers
4. Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers
5. Investigation of dielectric cap induced intermixing of InxGa1−xAsyP1−y/InP quantum well laser structures by photoreflectance and photoluminescence
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film;Materials Science in Semiconductor Processing;2022-10
2. Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing;Journal of Physics D: Applied Physics;2013-10-16
3. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure;Chinese Physics Letters;2010-01
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