Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAlAs/InGaAs Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference21 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Dynamical response of double parabolically graded quantum wells
3. Phonon bottleneck in self-formedInxGa1−xAs/GaAsquantum dots by electroluminescence and time-resolved photoluminescence
4. State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots
5. Inhomogeneous broadening in quantum dots with ternary aluminum alloys
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1. Morphological properties of laser irradiated Si/Ge multilayers;Physica B: Condensed Matter;2009-12
2. Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells;physica status solidi (b);2009-04
3. Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors;Chinese Physics Letters;2008-07
4. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates;Chinese Physics Letters;2005-09-22
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