Studies on semiconductor surface parameter by use of SAW technique-Reference-Cited by-同舟云学术

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Studies on semiconductor surface parameter by use of SAW technique

Published:1985-11 Issue:11 Volume:2 Page:485-488
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wen-qiu Wu,Xi Qin

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference8 articles.

1. Quenching and enhancement of the exciton and subband‐gap absorption in GaAs:Cr using two‐beam transverse acoustoelectric voltage spectroscopy

2. Determination of capture cross section and surface-states concentration profile using the surface-acoustic-wave convolver

3. Study of the surface properties of thermally oxidized silicon using surface acoustic wave attenuation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perturbation of SAW phase velocity in the n-Si/YZ-LiNbO3structure;Journal of Physics D: Applied Physics;1988-01-14

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