Effect of Bias on Content of GeC in Ge 1− x C x Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/3/060/pdf
Reference8 articles.
1. First-principles calculations of optical properties of GeC, SnC and GeSn under hydrostatic pressure
2. Effect of Ar+ ion irradiation on substitutional C incorporation into MBE-grown GeC/Si(001)
3. Composite germanium/C:H films prepared by DC unbalanced magnetron sputtering
4. Electrophysical properties of thin germanium/carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition process
5. Chemical bonding of a-Ge1−xCx:H films grown by RF reactive sputtering
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1. Evaluating the Ge: C ratio on the bonding structure, hardness, and residual stress of Ge1-x-Cx coatings fabricated by the PE-CVD method;Vacuum;2024-02
2. Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma;Plasma Sources Science and Technology;2023-08-01
3. On the Origin of Reduced Cytotoxicity of Germanium-Doped Diamond-Like Carbon: Role of Top Surface Composition and Bonding;Nanomaterials;2021-02-25
4. The growth mechanism of Ge1−x-Cx:H films deposited by PECVD method;Diamond and Related Materials;2020-03
5. Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputtering;Journal of Non-Crystalline Solids;2016-07
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