Two Gaps in Semiconducting EuSbTe 3 Studied by Angle-Resolved Photoemission Spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/7/077104/pdf
Reference17 articles.
1. Charge density wave formation inR2Te5(R=Nd, Sm, and Gd)
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3. Fermi Surface Reconstruction in the CDW State ofCeTe3Observed by Photoemission
4. Angle-resolved photoemission study of the evolution of band structure and charge density wave properties inRTe3(R=Y, La, Ce, Sm, Gd, Tb, and Dy)
5. Fermi surface evolution across multiple charge density wave transitions inErTe3
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1. Angle-resolved photoemission spectroscopy study of charge density wave order in the layered semiconductor EuTe4;Physical Review B;2022-11-16
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