Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions-Reference-Cited by-同舟云学术

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Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions

Published:1996-07 Issue:7 Volume:13 Page:553-556
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wang Zhan-guo,Lin Lan-ying,Li Cheng-ji,Zhong Xing-ru,Li Yun-yan,Wan Shou-ke,Sun Hong

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/13/7/020/pdf

Reference5 articles.

1. Preparation and Properties of GaAs Single Crystal Grown from Melt under Microgravity Conditions

2. Pseudopotential Calculation of the Optical Constants of MgO from 7-28 eV

3. Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of III-V semiconductor crystals under microgravity;SCIENTIA SINICA Physica, Mechanica & Astronomica;2019-10-11

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