Defects in Si-Rich SiO 2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy-Reference-Cited by-同舟云学术

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Defects in Si-Rich SiO 2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy

Published:2009-03-31 Issue:4 Volume:26 Page:046101
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Xiao-Peng Hao,Chun-Lan Zhou,Bao-Yi Wang,Long Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/26/4/046101/pdf

Reference17 articles.

1. On Some Modern Uses of the Electron in Logic and Memory

2. Silicon-based visible light-emitting devices integrated into microelectronic circuits

3. Study on excimer laser induced defects in SiO2films on Si by variable‐energy positron annihilation spectroscopy

4. Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing

5. Annealing characteristics of Si‐rich SiO2films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron total scattering cross-sections for alkali atoms;Journal of Physics B: Atomic, Molecular and Optical Physics;2017-12-01

2. Positron Impact Transitions of Atomic Sodium;Chinese Physics Letters;2011-09

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