A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor-Reference-Cited by-同舟云学术

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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

Published:2015-05 Issue:5 Volume:32 Page:058501
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Cui Lei,Wang Quan,Wang Xiao-Liang,Xiao Hong-Ling,Wang Cui-Mei,Jiang Li-Juan,Feng Chun,Yin Hai-Bo,Gong Jia-Min,Li Bai-Quan,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/32/5/058501/pdf

Reference14 articles.

1. High breakdown GaN HEMT with overlapping gate structure

2. Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer

3. Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement

4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method;IET Science, Measurement & Technology;2018-08

2. An Al 0.25 Ga 0.75 N/GaN Lateral Field Emission Device with a Nano Void Channel;Chinese Physics Letters;2018-03

3. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices;Acta Physica Sinica;2016

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