Molecular Beam Epitaxy Growth and Photoluminescence of Type-II (GaAs 1 x Sb x /In y Ga 1 y As)/GaAs Bilayer Quantum Well
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates
2. GaAs-based long-wavelength lasers
3. Continuous-wave operation of a 1.3-/spl mu/m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
4. Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm
5. Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy;Chinese Physics Letters;2006-03-30
2. Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot;Chinese Physics Letters;2005-10-27
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