InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/10/107302/pdf
Reference14 articles.
1. Unusual properties of the fundamental band gap of InN
2. Band Gap of Hexagonal InN and InGaN Alloys
3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
4. Nonlinear macroscopic polarization in III-V nitride alloys
5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
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1. Interface construction for charge transportation of ZnO/graphene multilayer films;Functional Materials Letters;2021-08
2. Thick (~1 μm) p-type InxGa1-xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C);physica status solidi (b);2015-02-17
3. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013
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