A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region
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Published:2017-11-06
Issue:6
Volume:36
Page:1653-1662
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ISSN:0332-1649
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Container-title:COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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language:en
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Short-container-title:COMPEL
Author:
Chen Jiajia,Ma Yuhan,Yang Shiyou
Abstract
Purpose
The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.
Design/methodology/approach
A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.
Findings
The results of the proposed model are very close to the tested ones.
Originality/value
A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference11 articles.
1. Physics-based SPICE-model for IGBTs with transparent emitter;IEEE Transactions on Power Electronics,2009
2. A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region;Acta Physica Sinica,2011
3. Modelling of power semiconductor devices, problems, limitations and future trends,1996
4. An experimentally verified IGBT model implemented in the Saber circuit simulator;IEEE Transactions on Power Electronics,1994
5. Physics-based power device models in SABER-implementation issues,2000
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