Author:
Sun Pengpeng,Liu Hui,Geng Miao,Zhang Rong,Yuan Tingting,Luo Wei Jun
Abstract
Purpose
The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25µm GaN HEMT technology are presented.
Design/methodology/approach
Each bit of this phase shifter design is based on high-pass/low-pass topology.
Findings
For all eight states, the insertion loss is 12.5 ± 2.5 dB from 8-10 GHz and the input return loss is better than 9 dB over 8-10 GHz. The 3-bit phase shifter achieves a RMS phase error of 1o at 8.5 GHz and a RMS amplitude error less than 1.1dB. The measured continuous wave power data demonstrates typical input RF power handing capability of 32 dBm at 8 GHz.
Originality/value
This is to the authors’ knowledge the first published results of 3-bit AlGaN/GaN phase shifter.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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