Author:
Clarke Margaret E,Rahim Suhail
Abstract
Models of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very complex and difficult to parameterise. The power PIN diode model described in this paper demonstrates how the use of empirically derived look‐up tables can simplify the characterisation problem and how non quasi‐static effects can be incorporated
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference11 articles.
1. D.F.HasIam, J.A.HouIdsworth and M.E.Clarke, Simulating Philips Power MOSFETs with SPICE, Proceedings of the High Frequency Power Conversion Conference. May 1990, pp296 - 305.
2. A simple diode model with reverse recovery
3. Diode forward and reverse recovery model for power electronic SPICE simulations
4. R.Kraus, K.Hoffman and H.J. Mattausch. Conf. Rec. IEEE Power Electronics Specialists Conference. 1992, pp863 - 869.
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