Author:
Fang Yanfeng,Zhang Yijiang
Abstract
Purpose
This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems.
Design/methodology/approach
The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation.
Findings
The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply.
Originality/value
In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Reference10 articles.
1. PA design using harmonic balance simulation with only S-parameters;Microwave Journal,2015
2. Power amplifiers and transmitters for next generation mobile handset;JSTS:Journal of Semiconductor Technology and Science,2009
3. Design of doherty power amplifiers for handset applications;IEEE Transactions on Microwave Theory and Techniques,2010
4. A broadband high efficiency monolithic power amplifier with GaAs HBT;IEICE Electronics Express,2018
5. Nonlinear analysis of a power amplifier in c band and load-pull technique calculation using volterra series;International Journal of Engineering, Transactions A: Basics,2004
Cited by
2 articles.
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