Author:
Roy Chinmay,Ghosh Aparna,Chatterjee Suman
Abstract
Purpose
This paper aims to estimate the relationship between defect structure with gas concentration for use as a gas sensor. The change in defect concentration caused a shift in the Fermi level, which in turn changed the surface potential, which is manifested as the potentiometric response of the sensing element.
Design/methodology/approach
A new theoretical concept based on defect chemistry and band structure was used to explain the experimental gas response of a sensor. The theoretically simulated response was compared with experimental results.
Findings
Understanding the origin of potentiometric response, through the generation of defects and a corresponding shift in Fermi level of sensing surface, by the adsorption of gas. Through this understanding, the design of a sensor with improved selectivity and stability to a gas can be achieved by the study of defect structure and subsequent band analysis.
Research limitations/implications
This paper provides information about various types of surface defects and numerical simulation of material with defect structure. The Fermi energy of the simulated value is correlated with the potentiometric sensor response.
Practical implications
Gas sensors are an integral part of vehicular and industrial pollution control. The theory developed shows the origin of response which can help in identifying the best sensing material and its optimum temperature of operation.
Social implications
Low-cost, reliable and highly sensitive gas sensors are highly demanded which is fulfilled by potentiometric sensors.
Originality/value
The operating principle of potentiometric sensors is analyzed through electron band structure analysis. With the change in measured gas concentration, the oxygen partial pressure changes. This results in a change in defect concentration in the sensing surface. Band structure analysis shows that change in defect concentration is associated with a shift in Fermi level. This is the origin of the potentiometric response.
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Reference57 articles.
1. The calculated defect properties of La2CuO4 related to high –Tc superconductivity;Philosophical Magazine A,1988
2. Grain size effects on H2 gas sensitivity of thick film resistor using SnO2 nanoparticles;Thin Solid Films,1997
3. Solid-state gas sensors: a review;Journal of the Electrochemical Society,1992
4. Conduction mechanisms in SnO2 based polycrystalline thick film gas sensors exposed to CO and H2 in different oxygen backgrounds;Sensors and Actuators B: Chemical,2011
5. Response behavior of tin oxide thin film gas sensors grown by MOCVD;Sensors and Actuators B: Chemical,2000
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