Author:
Ammous Kaiçar,Abid Slim,Ammous Anis
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Choosing a thermal model for electrothermal simulation of power semiconductor devices
2. Ammous, A., Allard, B. and Morel, H. (1998), “Transient temperature measurements and modeling of IGBT's under short circuit”,IEEE Trans. Electron Devices, Vol. 13 No. 1, pp. 12‐25.
3. Hecht, U. and Scheuermann, U. (2001), “Static and transient thermal resistance of advanced power modules”,Proc. PCIM'01, Nürnberg, Germany, pp. 3‐9.
4. Krümmer, R., Konard, S., Petzolt, J. and Lorenz, L. (1998), “Thermal investigation to the structure and the use of power modules”,Power Conversion. May 1998 Proceeding, pp. 445‐53.
5. A closed form solution of junction to substrate thermal resistance in semiconductor chips
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献