Affiliation:
1. School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Aoyama, T., Sato, M., Sekine, K.et al.(2006), “HfSiON gate dielectrics technology for CMOSFET application”,Solid‐State and Integrated Circuit Technology, No. 10, pp. 380‐3.
2. Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
3. Li, M.F., Wang, X.P., Yu, H.Y.et al.(2006), “A novel high‐k gate dielectric HfLaO for next generation CMOS technology”,Solid‐State and Integrated Circuit Technology, No. 10, pp. 372‐5.
4. Leakage scaling in deep submicron CMOS for SoC
5. Liu, X., Lou, S., Xia, Z., Guo, D., Zhu, H., Kang, J.et al.(2001), “Characteristics of different structure sub‐100 nm MOSFETs with high‐k gate dielectrics”,Solid‐State and Integrated‐Circuit Technology, Vol. 1, pp. 333‐6.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献