A NUMERICAL STUDY OF THE DEPENDENCE OF UNITY GAIN BANDWIDTH fT ON POLYSILICON EMITTER IN BIPOLAR TRANSISTORS
Author:
Publisher
Emerald
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference12 articles.
1. A 9-GHz frequency divider using Si bipolar super self-aligned process technology
2. High-speed polysilicon emitter—base bipolar transistor
3. 18-GHz 1/8 dynamic frequency divider using Si bipolar technologies
4. The SIS tunnel emitter: A theory for emitters with thin interface layers
5. The influence of surface treatments on the electrical characteristics of polysilicon emitter bipolar transistors
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