Selective metallization of silicon and ceramic substrates

Abstract

Purpose The purpose of this paper is to present the possibility of technology of chemical metallization for the production of electrodes and resistors based on Ni–P alloy on silicon (Si), alundum (Al2O3) and low temperature cofired ceramic (LTCC) substrates. The developed technology provides low cost in any form. Design/methodology/approach During the study monocrystalline Si plates and Al2O3 and LTCC substrates were used. On the surface of the substrates, the electrodes (resistors) by the electroless metallization were made. Subsequently, the electrical parameters of obtained structures were measured. Afterwards, trial soldering was made to demonstrate that the layer is fully soldered. Findings Optimal parameters of the metallization bath were specified. As a result of the research conducted, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated Si plate and Al2O3 and LTCC substrates comprises the following technology: masking, selective activation, nickel-plating of activated plate. Such obtained metal layers have a great variety of application; in particular they can be used for the preparation of electric contacts in Si solar cells, production of electrodes and resistors and production of electrodes in thermoelectric structures. Originality/value The paper presents a new, unpublished method of manufacturing electrodes (resistors) on Si plate and Al2O3 and LTCC substrates.