Giant self-driven exciton-Floquet signatures in time-resolved photoemission spectroscopy of MoS <sub>2</sub> from time-dependent GW approach-Reference-Cited by-同舟云学术

Giant self-driven exciton-Floquet signatures in time-resolved photoemission spectroscopy of MoS ₂ from time-dependent GW approach

Published:2023-07-31 Issue:32 Volume:120 Page:
ISSN:0027-8424
Container-title:Proceedings of the National Academy of Sciences
language:en
Short-container-title:Proc. Natl. Acad. Sci. U.S.A.

Author:

Chan Y.-H.¹²³⁴^ORCID,Qiu Diana Y.¹²⁵^ORCID,da Jornada Felipe H.¹²⁶⁷^ORCID,Louie Steven G.¹²^ORCID

Affiliation:

1. Department of Physics, University of California, Berkeley, CA 94720-7300

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

4. Physics Division, National Center of Theoretical Sciences, Taipei 10617, Taiwan

5. Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06520

6. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305

7. Stanford PULSE Institute, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025

Abstract

Time-resolved, angle-resolved photoemission spectroscopy (TR-ARPES) is a one-particle spectroscopic technique that can probe excitons (two-particle excitations) in momentum space. We present an ab initio, time-domain GW approach to TR-ARPES and apply it to monolayer MoS 2 . We show that photoexcited excitons may be measured and quantified as satellite bands and lead to the renormalization of the quasiparticle bands. These features are explained in terms of an exciton-Floquet phenomenon induced by an exciton time–dependent bosonic field, which are orders of magnitude stronger than those of laser field–induced Floquet bands in low-dimensional semiconductors. Our findings imply a way to engineer Floquet matter through the coherent oscillation of excitons and open the new door for mechanisms for band structure engineering.

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

Link

https://pnas.org/doi/pdf/10.1073/pnas.2301957120

Reference62 articles.

1. Y. Y. Peter, M. Cardona, Fundamentals of Semiconductors, Physics and Materials Properties (Springer, 2010).

2. Quantum Theory of the Optical and Electronic Properties of Semiconductors

3. T. Mueller E. Malic Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors. npj 2D Mater. Appl. 2 29 (2018).

4. Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- WSe2 Heterostructures

5. Quantum Hall drag of exciton condensate in graphene

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