Dislocation-tuned ferroelectricity and ferromagnetism of the BiFeO 3 /SrRuO 3 interface

Author:

Li Xiaomei1234,Han Bo13,Zhu Ruixue13,Shi Ruochen13ORCID,Wu Mei13,Sun Yuanwei13,Li Yuehui13ORCID,Liu Bingyao13,Wang Lifen45ORCID,Zhang Jingmin3,Tan Congbing6ORCID,Gao Peng13789,Bai Xuedong45ORCID

Affiliation:

1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China

2. School of Integrated Circuits, East China Normal University, Shanghai 200241, China

3. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

4. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

5. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

6. Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, China

7. Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

8. Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China

9. Hefei National Laboratory, Hefei 230088, China

Abstract

Misfit dislocations at a heteroepitaxial interface produce huge strain and, thus, have a significant impact on the properties of the interface. Here, we use scanning transmission electron microscopy to demonstrate a quantitative unit-cell-by-unit-cell mapping of the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO 3 /SrRuO 3 interface. We find that huge strain field is achieved near dislocations, i.e., above 5% within the first three unit cells of the core, which is typically larger than that achieved from the regular epitaxy thin-film approach, thus significantly altering the magnitude and direction of the local ferroelectric dipole in BiFeO 3 and magnetic moments in SrRuO 3 near the interface. The strain field and, thus, the structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us to understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure. Such defect engineering allows us to tune the local ferroelectric and ferromagnetic order parameters and the interface electromagnetic coupling, providing new opportunities to design nanosized electronic and spintronic devices.

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

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