Gate-tunable contact-induced Fermi-level shift in semimetal-Reference-Cited by-同舟云学术

Gate-tunable contact-induced Fermi-level shift in semimetal

Published:2022-04-22 Issue:17 Volume:119 Page:
ISSN:0027-8424
Container-title:Proceedings of the National Academy of Sciences
language:en
Short-container-title:Proc. Natl. Acad. Sci. U.S.A.

Author:

Li Xuanzhang¹^ORCID,Wei Yang¹^ORCID,Lu Gaotian¹,Mei Zhen¹,Zhang Guangqi¹,Liang Liang¹,Li Qunqing¹,Fan Shoushan¹,Zhang Yuegang¹²

Affiliation:

1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China

2. Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China

Abstract

Significance Resistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal–semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict the gate-tunable CIFS in such Sm-S systems. The Schottky barrier height for the Sm-S junction can be modified by introducing the CIFS term. The progress in this work will have an important role in promoting the research of Sm-S junctions, which are essential building blocks for future low-dimensional nanodevices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

Link

https://pnas.org/doi/pdf/10.1073/pnas.2119016119

Reference44 articles.

1. Physics of Semiconductor Devices