Self-driven carbon atom implantation into fullerene embedding metal–carbon cluster

Author:

Guan Runnan1ORCID,Chen Zuo-Chang2ORCID,Huang Jing34,Tian Han-Rui2,Xin Jinpeng1,Ying Si-Wei2ORCID,Chen Muqing1,Zhang Qianyan2,Li Qunxiang3ORCID,Xie Su-Yuan2ORCID,Zheng Lan-Sun2,Yang Shangfeng1

Affiliation:

1. Hefei National Research Center for Physical Sciences at Microscale, Chinese Academy of Sciences Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

2. State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China

3. Hefei National Research Center for Physical Sciences at Microscale, Department of Chemical Physics, Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China

4. School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230601, China

Abstract

Hundreds of members have been synthesized and versatile applications have been promised for endofullerenes (EFs) in the past 30 y. However, the formation mechanism of EFs is still a long-standing puzzle to chemists, especially the mechanism of embedding clusters into charged carbon cages. Here, based on synthesis and structures of two representative vanadium–scandium–carbido/carbide EFs, VSc 2 C@ I h (7)-C 80 and VSc 2 C 2 @ I h (7)-C 80 , a reasonable mechanism—C 1 implantation (a carbon atom is implanted into carbon cage)—is proposed to interpret the evolution from VSc 2 C carbido to VSc 2 C 2 carbide cluster. Supported by theoretical calculations together with crystallographic characterization, the single electron on vanadium (V) in VSc 2 C@ I h (7)-C 80 is proved to facilitate the C 1 implantation. While the V=C double bond is identified for VSc 2 C@ I h (7)-C 80 , after C 1 implantation the distance between V and C atoms in VSc 2 C 2 @ I h (7)-C 80 falls into the range of single bond lengths as previously shown in typical V-based organometallic complexes. This work exemplifies in situ self-driven implantation of an outer carbon atom into a charged carbon cage, which is different from previous heterogeneous implantation of nonmetal atoms (Group-V or -VIII atoms) driven by high-energy ion bombardment or high-pressure offline, and the proposed C 1 implantation mechanism represents a heretofore unknown metal–carbon cluster encapsulation mechanism and can be the fundamental basis for EF family genesis.

Funder

MOST | National Key Research and Development Program of China

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

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