Abstract
Silicon nitride possesses an attractive combination of thermo-mechanical properties which makes it a strong candidate material for many structural ceramic applications. Unfortunately, many of the conventional processing techniques used to produce Si3N4, such as hot-pressing, sintering, and hot-isostatic pressing, utilize significant amounts of densification aids (Y2O3, Al2O3, MgO, etc.) which can ultimately lower the utilization temperatures to well below that of pure Si3N4. Chemical vapor deposition (CVD) is an alternative processing method for producing pure Si3N4. The CVD Si3N4 material examined in this study was supplied by Union Carbide. Deposition was performed at 1450°C and 1 Torr pressure using SiCl4 and NH3 as the reacting gases. The CVD methods used were similar to those described by Niihara and Hirai.
Publisher
Cambridge University Press (CUP)
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5. Work funded as part of the Ceramic Technology for Advanced Heat Engines Project of the Advanced Materials Development Program and partially performed in the HTML User Facility, both sponsored by the U.S. Dept. of Energy, Assistant Secretary for Conservation and Renewable Energy, Office of Trans. Technologies under contract DE-AC05-84OR21400 with Martin Marietta Energy Sys., Inc.
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