Abstract
The collisional recombination process in highly ionized plasma and relevant reheating of the plasma are analyzed in the parameter regime appropriate for X-ray lasing. A method for describing the rate of collisional recombination is proposed based on a compact threelevel atomic model. Reheating of the plasma due to collisional recombination is described by a time-dependent adiabatic exponent γ. Using a self-similar description of the free expanding plasma, the gain of recombination lasing is investigated. In comparison with an open two-level atomic model, the present model gives lower gains appearing later in time. The inclusion of plasma reheating reduces the peak gain and shifts it to later times. Although the three-level model is shown to give a good qualitative description of the atomic processes, a considerable discrepancy was observed when compared with simulations for hydrogenlike carbon.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics