Abstract
The surfaces of α-Al2O3(R-Surfaces) which are used as substrates for the growth of SOS (Silicon on Sapphire) were investigated with the REM technique. Most of the studies using TEM and SEM have been centered on SOS interfaces but only limited studies have been conducted on surfaces of sapphire before the growth of Si. The purpose of this paper is to show that surfaces have different distributions of steps and facets as compared to the (0001) and surfaces which are characterized by large atomically flat areas separated by steps that are several atomis high.Specimens were obtained from Sapphikon Inc., NH. Polished and cleaned faces were observed before and after annealing at 1400°C for 24 hrs in air. All observations were carried out using a JEOL-JEM 200CX microscope at 100kV.
Publisher
Cambridge University Press (CUP)