Abstract
Microstructural TEM studies have been combined with temperature-dependent measurements of laser reflection and transmission to study crystallization in amorphous films of near-stoichiometric germanium telluride. The transformation proceeds by rapid growth of crystalline islands through the film thickness followed by two-dimensional growth in the film plane. Isothermal studies find an Avrami exponent of 4.5 suggesting a non-linear crystal growth rate.75nm of Ge48Te52 was deposited by co-evaporation from separate Knudsen cells onto Si, carbon-coated mica, and glass substrates. Compositions were determined by x-ray fluorescence from films deposited on silicon.
Publisher
Cambridge University Press (CUP)