HREM of low-temperature InP grown by gas source MBE

Abstract

In recent times, following the application of MBE GaAs grown at low temperatures as an electrical buffer layer in field effect transistors, there has been a focus of attention on other III-V materials grown at low temperatures. This lead to speculation on the possibility of applications of low temperature (LT) InP in electronic and photonic devices resulting in a need to correlate the structural properties of this material with the electrical and optical measurements. The current endeavour is directed toward studying the structure and the morphology of LT InP synthesized under varying growth conditions in order that a correlation with properties like conductivity and photoluminescence can be effected.In this present study, InP grown at low temperatures by gas source MBE using for sources solid indium and P2 has been characterized by TEM. Samples were prepared by mechanical grinding, dimpling and low-angle argon ion-milling. The low-angle technique was employed because it greatly mitigates the formation of indium islands during the milling of InP samples with Ar+ ions. Observations were made on an ISI 002B electron microscope, operating at 200 kV.