Reflection electron microscopy of ferroelectric domains

Abstract

The intersections of ferroelectric domain boundaries with crystal surfaces have been studied by optical microscopy. The method is widely used but usually of low resolution. Transmission electron microscopy (TEM) can provide high-resolution images but may not be appropriate for studying crystal surfaces. Scanning electron microscopy (SEM) has also been used to study the intersections of ferroelectric domain boundaries with the surfaces of ferroelectric crystals. However, the resolution is still low and is destructive if an etched crystal surface is used. Other alternatives have also been attempted to study ferroelectric domain boundaries on surfaces, such as scanning tunneling microscopy (STM), atomic force microscopy (AFM). But, no reports have been known so far.On the other hand, reflection electron microscopy (REM), as a branch of dark-field imaging technique dedicated for surface studies in TEM, has been developed to study crystal surfaces, surface reconstruction and surface defects with a resolution of about 10Å. It has been considered as a powerful technique to study surface defects and may be used to study the ferroelectric domain boundaries emerging on surfaces.