GaN devices for power amplifier design-Reference-Cited by-同舟云学术

GaN devices for power amplifier design

Published:2009-04 Issue:2 Volume:1 Page:137-143
ISSN:1759-0787
Container-title:International Journal of Microwave and Wireless Technologies
language:en
Short-container-title:Int. j. microw. wirel. technol.

Author:

Martín-Guerrero Teresa M.,Ducatteau Damien,Camacho-Peñalosa Carlos,Gaquière Christophe

Abstract

This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

Reference6 articles.

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5. Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier Design

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