Author:
Johansen Tom K.,Rudolph Matthias,Jensen Thomas,Kraemer Tomas,Weimann Nils,Schnieder Frank,Krozer Viktor,Heinrich Wolfgang
Abstract
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering
Reference13 articles.
1. InP DHBT Process in Transferred-Substrate Technology With $f_{t}$ and $f_{\max}$ Over 400 GHz
2. Versleijen M.P.J.G. : Distributed high frequency effects in bipolar transistors, in Proc. of Bipolar Circuits and Technology Meeting, 1999.
3. A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
4. Rudolph M. : Introduction to Modeling HBTs, Artech House, Norwood, MA, 2006.
5. Horng T.S. ; Wu J.M. ; Huang H.H. : An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters, in IEEE MTT-S Int. Microwave Symp., 2001.
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