A Best Known Method to Effectively Differentiate Elements with XEDS Peaks Overlapping for High-Volume Manufacturing of Semiconductor Device at Wafer Foundries
Author:
Publisher
Cambridge University Press (CUP)
Subject
Instrumentation
Reference4 articles.
1. Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices
2. High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
3. An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries
4. [4] Thanks to Irene Brooks for proof-reading, Gerald Walker for his skillfulness in TEM-prep and Long Men for screening the TEM sample; and Fab8 Management and Legal teams for supporting the publication clearance.
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