Characterisation of Planar Defects in Ternary Layered Chalcogenides for Electronic Devices-Reference-Cited by-同舟云学术

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Characterisation of Planar Defects in Ternary Layered Chalcogenides for Electronic Devices

Published:2022-08-01 Issue:S1 Volume:28 Page:2392-2393
ISSN:1435-8115
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Simonian Tigran¹²³,Roy Ahin¹²³,Sofer Zdenek⁴,Nicolosi Valeria¹²³

Affiliation:

1. Advanced Microscopy Centre , CRANN & AMBER, Grand Canal Quay, , Ireland

2. Trinity College Dublin , CRANN & AMBER, Grand Canal Quay, , Ireland

3. Trinity College Dublin School of Chemistry, , Ireland

4. University of Chemistry and Technology Department of Inorganic Chemistry, , Prague, Czechia

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

https://academic.oup.com/mam/article-pdf/28/S1/2392/48824170/mam2392.pdf

Reference4 articles.

1. Liquid Exfoliation of Layered Materials

2. Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range

3. Urbach Tail and Optical Absorption in Layered Semiconductor TlGaSe2(1-x)S2xSingle Crystals

4. Temperature behavior of dielectric function spectra and optical transitions in TlGaS2

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