Broadband AlGaN/GaN MMIC amplifier
-
Published:2011-03-18
Issue:4
Volume:3
Page:399-404
-
ISSN:1759-0787
-
Container-title:International Journal of Microwave and Wireless Technologies
-
language:en
-
Short-container-title:Int. J. Microw. Wireless Technol.
Author:
Darwish Ali M.,Hung H. Alfred,Viveiros Edward,Ibrahim Amr A.
Abstract
A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering