Influence of thermal expansion on the lattice parameter of silicon-Reference-Cited by-同舟云学术

Influence of thermal expansion on the lattice parameter of silicon

Published:1994-12 Issue:4 Volume:9 Page:260-264
ISSN:0885-7156
Container-title:Powder Diffraction
language:en
Short-container-title:Powder Diffr.

Author:

Liu Fengchao

Abstract

Considering the thermal expansion of silicon at ambient conditions, the lattice parameter will change 0.00032 Å for a 10 °C range. This range is measurable with modern diffraction instrumentation illustrating the importance of knowing the accurate lattice parameter, the temperature of measurement, and the thermal expansion coefficient. The best value for the expansion coefficient is 2.45×10−6/°C.

Publisher

Cambridge University Press (CUP)

Subject

Condensed Matter Physics,Instrumentation,General Materials Science,Radiation

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