Characterization of Damage in SiO2 during Helium Ion Microscope Observation by Luminescence and TEM-EELS-Reference-Cited by-同舟云学术

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Characterization of Damage in SiO2 during Helium Ion Microscope Observation by Luminescence and TEM-EELS

Published:2012-07 Issue:S2 Volume:18 Page:814-815
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:Microsc Microanal

Author:

Ogawa S.,Iijima T.,Awata S.,Sugie R.,Kawasaki N.,Otsuka Y.

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Publisher

Cambridge University Press (CUP)

Subject

Instrumentation

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roadmap for focused ion beam technologies;Applied Physics Reviews;2023-12-01

2. Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope;Reports on Progress in Physics;2021-09-15

3. Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector;Beilstein Journal of Nanotechnology;2020-12-11

4. Ion Microscopy;Springer Handbook of Microscopy;2019

5. Ionoluminescence;Helium Ion Microscopy;2016

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