Author:
Brochu M.,Demers H.,Gauvin R.,Pugh M.D.,Drew R.A.L.
Abstract
This work demonstrates the possibility of using the Duane–Hunt limit of the bremsstrahlung to determineE2values of Si3N4and AlN ceramics. TheEDHLversusE0graph demonstrates that for conductive materials, the experimental curve is parallel to the theoretical (EDHL=E0), but both curves cross in the case of insulators. The intersection points (E2value), are 3.01 keV for Si3N4and 2.67 keV for AlN. Imaging of ceramic grain structure at high magnification was performed to demonstrate the validity of the calculatedE2values.
Publisher
Cambridge University Press (CUP)
Reference8 articles.
1. Belhaj, M. , Odof, S. , Msellak, K. , & Jbara, O. (2000).Time-dependent measurement of the trapped charge in electronirradiated insulators: Application toAl2O3-sapphire.J Appl Phys 88,2289–2294.
2. Joy, D.C. & Joy, C.S. (1996).Low voltage scanning electron microscopy.Micron 27,247–263.
3. Kramers, H.A. (1923).Phil Mag 46(6th ser),836.
4. Suganuma, K. (1991).Joining non-oxide ceramics. InCeramics and Glasses, Engineered Materials Handbook,Vol. 4, pp.523–531.Materials Park, OH:ASM International.
5. Cazaux, J. (1996).Electron probe microanalysis of insulating materials:Quantification problems and some possible solutions.X-Ray Spectrom 25,1–16.
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