THE MODELING OF PROGRESS OF PRODUCTION DEFECTS IN SURFACE LAYERS OF FUNCTIONAL OPTICAL COMPONENTS OF MOEMS

Author:

Nevliudov I.1ORCID,Omarov M.1ORCID,Chala O.1ORCID

Affiliation:

1. Kharkiv National University of Radio Electronics, Ukraine

Publisher

ISMA University of Applied Science

Reference32 articles.

1. Nagornov, Y. S., Kostishko, B. M., Mikov, S. R., Atazhanov, Sh. R., Zolotoe, A. V., Pchelintseva, E. S. (2007), "The mechanism of formation of silicon carbide nanocrystals during high-temperature carbonization of porous silicon", ZhTF, Vol. 77, No. 8, P. 135.

2. Oksanich, A. P., Once, M. G., Kholod, O. G., Mashchenko, M. A. (2018), "Application of porous GaAs layers in the manufacture of Schottky diodes", Bulletin of the Mikhail Ostrogradsky KrNU, No. 1, P. 22–28.

3. Kostishko, В. М., Zolotov, А. V., Atazhanov, Sh. R. (2004), "Comparative Simulation of Annealing of Porous Silicon Substrate of Simple Cubic and Diamond-Like Lattice Structure", Physics of low-dimensional structures, No. 3/4, P 1.

4. Oksanich, A. P., Prytchin, S. E., Once, M. G., Kholod, O. G. (2018), "Development of a mathematical model of the contact of metal -porous gallium arsenide with the Schottky barrier", Bulletin of the Mikhail Ostrogradsky KrNU, No.4, P. 49–55.

5. Oksanich, A. P., Prytchyn, S. E., Kogdas, S. E., Kholod, O. G., Mashchenko, M. A. (2018), "Improvement of the method of obtaining a porous layer on n-GaAs substrates", Scientific notes of TNU named after V. I. Vernadsky, No. 6, P. 228–234.

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