Affiliation:
1. National Institute of Telecommunications - State Research Institute: Warszawa, PL
Abstract
An electromagnetic wavelength-scale analysis of the optical characteristics of multi-nanolayer photovoltaic (PV) structures: without an antireflection coating, with an antireflection coating on the top of the structure, and with both the antireflection coating on the top and a broadband non-periodic (chirped) distributed Bragg reflector (DBR) on the bottom of the structure is performed. All the PV structures studied are based on a Si p-i-n type absorber supported by a metallic layer (Cu) and SiO2 substrate. The top-to-bottom electromagnetic analysis is performed numerically by the method of single expression (MSE). Absorbing and reflecting characteristics of the multi-nanolayer PV structures are obtained. The influence of the thicknesses and permittivities of the layers of the PV structures on the absorbing characteristics of the structures is analyzed to reveal favourable configurations for enhancement of their absorption efficiency. The localizations of the electric component of the optical field and the power flow distribution within all the PV structures considered are obtained to confirm an enhancement of the absorption efficiency in the favorable configuration. The results of the electromagnetic wavelength-scale analysis undertaken will have scientific and practical importance for optimizing the operation of thin-filmmulti-nanolayer PV structures incorporating a chirped DBR reflector with regards to enhancing their efficiency.
Publisher
National Institute of Telecommunications
Subject
Electrical and Electronic Engineering,Computer Networks and Communications