Low Damage and Anisotropic Dry Etching of High-k Dielectric HfO2 Films in Inductively Coupled Plasmas-Reference-Cited by-同舟云学术

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Low Damage and Anisotropic Dry Etching of High-k Dielectric HfO2 Films in Inductively Coupled Plasmas

Published:2010-09-30 Issue:3 Volume:6 Page:107-112
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:
Short-container-title:Electron. Mater. Lett.

Author:

Park Jong Cheon,Hwang Sungu,Kim Jong-Man,Kim Jin Kon,Seo Jun Hyuk,Choi Duck-Kyun,Lee Hee Soo,Cho Hyun

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of etching performance of single etching gases for high-κ films;Microelectronic Engineering;2023-10

2. High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics;Scientific Reports;2018-10-04

3. Hydrogen-Induced Damage During the Plasma Etching Process;Nano;2017-09

4. Removal of Plasma-Induced Physical Damage Formed in Nanoscale Three-Dimensional FinFETs;Nano;2017-08

5. Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films;Thin Solid Films;2013-11

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