Electronic Transport Properties of Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> Fabricated by Hot Extrusion

Author:

Hwang Jeong Yun,Hasan Rahidul,Lee Kyu Hyoung

Abstract

Herein we report the optimized processing conditions of hot extrusion for fabricating an <i>n</i>-type Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> thermoelectric compound, with high electronic transport properties as well as improved mechanical reliability. We fabricated a Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> extrudate that was 3.8 mm in diameter and 700 mm in length by controlling the processing parameters of temperature and pressure. A 3-point bending strength of over 70 MPa, which is 7 times higher that of the commercial zone melting ingot, was obtained in the samples prepared at 460 <sup>o</sup>C temperature under 6–6.5 MPa pressure. The samples benefitted from the formation of a highly-dense microstructure (relative density > 98%). It is noted that the electronic transport properties (electrical conductivity and Seebeck coefficient) could be manipulated by controlling the applied pressure of hot extrusion at 460 <sup>o</sup>C, mainly due to the change in the characteristics of the 00<i>l</i> crystal orientation, which originated from grain rotation and rearrangement. Power factor values of ~2.9 mW/mK<sup>2</sup> at 300 K and ~2.95 mW/mK<sup>2</sup> at 320 K, similar to those of sintered bulks, were obtained in the hot extrudate fabricated under processing parameters of 460 <sup>o</sup>C and 6 MPa. Moreover, a high power factor value of 2.25 mW/mK<sup>2</sup> was observed even at the high temperature of 480 K, which is 70% higher than that of Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> bulk fabricated by hot pressing.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

The Korean Institute of Metals and Materials

Subject

Metals and Alloys,Surfaces, Coatings and Films,Modeling and Simulation,Electronic, Optical and Magnetic Materials

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